-
Automatic scribing and
breaking of many substrate materials, such as
Sapphire, GaAs, LiNbO3, InP, GaP, Silicon
-
Continuous scribe, skip
scribe, edge scribe
-
Both contact and
non-contact breaking
-
Alignment Time: < 30
seconds
-
Wafer Thickness: 40 um to
1725 um
-
Die size: from ~200µm
(multiple sizes possible for same wafer)
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